| VFSHAM _ 7 www'V'Shay'C°m Vishay General Semiconductor ELEcTnIcAL cHARAcTERIsTIcs (TA = 25 0C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage Maximum DC reverse current in at rated DC blocking voltage TA : 125 cc Typieai reverse recovery time :F i g-g;:A'H :1-0 A: rr — - Typical junction capacitance 4.0 V, 1 MHZ RARAMEEER @m %@m m ml Typical thermal resistance NoteN ate ii) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, PCB mounted RREEERRERR/N GRORAEA/EA Ea RRORAERAR Ea GRARARER/RA-i) EaRRORARER/7Ri> Ejj ii) AEC-Q101 qumniedRATINGS AND cHARAcTERIsTIcs cunves (TA = 25 cc unless otherwise noted) 1.0 25 T J : T J Max. A 3 5.3 ms Single Hair Sinewave $ 0.5 : 20 E E e 5S 00 0.6 G) 15 E B toe 2O 0.4 ‘- toK me E 'g 60 HZ U0-; 0.2 Resistive or inductive Load ? 5.0 D 375“ (9.5 mm) Lead Lengtn E | I 0 0 20 40 S0 B0 100 I20 140 I60 150Ambient Temperature (“Cl Number of Cycles at 60 HZFig. 1 — Fonlverd Current Derating Cun/e Fig. 2 — Maximum Non—repetitive Peak Forward Surge Current Revision: 11-Dee-13 2 Document Number: 88636 For technical questions witl-iin your region: DiodesAmericas@vishay.Com, DiodesAsia@vishay.com, DiodesEurope@Vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.comzdoc?91000 |